8 GHz DPDT micro-mechanical RF MEMS Switch (ESD Enhanced) with Loopback
M2CG
This is a High power DPDT micro-mechanical RF MEMS Switch (Length*Width*Height: 7.5*4.4*2.0mm). Each channel is capable of greater than 9W forward power. This RF MEMS switch provides ultra-low insertion loss and superior linearity from DC to 8GHz with greater than 3 billion on/off operations. The M2CG is designed for enhanced ESD protection up to 2KV HBM. It is ideal in applications where linearity, insertion loss and ESD protection are critical parameters.
Features
- DC to 8GHz
- DPDT
- High Linearity IP3 > 90 dBm
- On-State Insertion Loss: 3.0 dB @ 8GHz
- 35 dB Isolation @ 8 GHz
- Off-State Capacitance at 15fF
- 3 Billion Switching Operations
- 3 microsec turn on time
- 2000V ESD (HBM)
Contact Form
- DPDT (MEMS Switch)
Frequency
- 8 GHz
Power Handling
- 9W (CW) 100W (Pulsed)
Load Voltage (V)
- 150
Load Current (A)
- 0.5
On Resistance (Ω)
- 1
Insertion Loss
- 3dB @ 8GHz
Return Loss
- 10dB@ 8GHz
Isolation
- 35dB
ESD Protection
- 2,000V
Application
- Switched Filter Banks and Tunable Filters
- High Power RF Front-Ends
- Semiconductor Testing
- Antenna Tuning
- Antenna Beam Steering
- Digital Step Attenuators
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